CMOS Image Sensor and Method of Manufacturing the Same

ABSTRACT

Disclosed herein are a CMOS image sensor and a method of manufacturing the same, which can reduce current leakage through a plug connecting a photodiode and a transfer transistor to each other, and thereby provide low dark current levels. The CMOS image sensor includes a first epitaxial layer on or in a substrate. A photodiode PD is in the first epitaxial layer. A second epitaxial layer is on or in the substrate (e.g., on the first epitaxial layer). A shallow trench isolation region is in an area of the substrate. A plug is in the substrate (e.g., the second epitaxial layer) connected with the photodiode and spaced apart from the shallow trench isolation region. A transfer transistor having a gate electrode and source/drain regions is connected with the plug.

This application is a divisional of U.S. patent application Ser. No.11/586,880 (Attorney Docket No. OPP-GZ-2007-0336-US-00), filed on Oct.25, 2006, which claims the benefit of Korean Application No.10-2005-0100842, filed on Oct. 25, 2005, each of which is incorporatedby reference herein in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a CMOS image sensor. Particularly, thepresent invention relates to a CMOS image sensor and a method ofmanufacturing the same, which can mitigate current leakage through aplug connecting a photodiode with a transfer transistor, to therebyenable or provide a low dark current.

2. Background of the Related Art

An image sensor is a semiconductor device that converts one- ortwo-dimensional optical information into electrical signals. Such animage sensor is largely categorized into a metal-oxide-semiconductor(MOS) type and a charge coupled device (CCD) type.

A CMOS image sensor is a device that converts an optical image into anelectrical signal using the CMOS. Such a CMOS image sensor employs aswitching mode where a number of MOS transistors corresponding to thenumber of pixels are formed and used for sensing outputs thereof in aconsecutive manner. The CMOS image sensor enables a simplified drivingmode, as compared with conventional CCD image sensors, and allows forvarious scanning modes. In addition, the signal processing circuitry canbe integrated into a single chip to allow for miniaturization ofproducts. Furthermore, a compatible CMOS technology can be used,resulting in a reduction in manufacturing cost and power consumption.

FIG. 1 is a circuit diagram showing a unit pixel in a CMOS image sensorhaving four transistors and two capacitance structures. The unit pixelof FIG. 1 includes a photodiode PD for optical-sensing and four NMOStransistors. The four transistors include a transfer transistor Tx fortransferring photons (optical charges) generated in the photodiode to afloating diffusion region (designated C_(f) in FIG. 1), a resettransistor Rx for discharging the charges stored in the floatingdiffusion region for signal detection, a drive transistor Dx for drivingthe signal detected in the floating diffusion region and serving as asource follower, and a select transistor Sx for switching and addressingsignals at the pixel level. In the figures, “Cf” denotes a floatingdiffusion region and “Cp” denotes a photodiode capacitance.

The above-configured unit pixel of image sensor is operated as follows.First, the reset transistor Rx, the transfer transistor Tx and theselect transistor Sx are turned on to reset the unit pixel. At thistime, the photodiode begins to be depleted and carrier changing (orcharging) may occur in the capacitance Cp. The capacitance Cf in thefloating diffusion region is charged up to the supply voltage V_(DD).Then, the transfer transistor Tx is turned off, the select transistor Sxis turned on and then the reset transistor Rx is turned off. At thisoperational state, an output voltage V1 is read from the output terminalOut of the unit pixel, and stored in a buffer. Thereafter, the transfertransistor Tx is turned on so that the capacitance Cp changed (orcharged) according to the light-intensity may be transferred to thefloating diffusion region (i.e., capacitance Cf). Then, again, theoutput terminal Out reads another output voltage V2 and converts theanalog data for “V1-V2” into a digital data, thus completing one periodor cycle of operation for the unit pixel.

Hereafter, a connection configuration of a conventional photodiodetowards the gate of a transfer transistor will be described hereafter.

FIGS. 2 a and 2 b are plan view and sectional view showing theconnection between a photodiode and a transfer transistor according tothe related art.

A connection between the photodiode and the transfer transistor in theconventional CMOS image sensor will be described hereinafter. As shownin FIGS. 2 a and 2 b, a first epitaxial layer 11 is formed on asubstrate 10. A photodiode PD 13 is formed within the first epitaxiallayer 11 of the substrate 10.

In addition, a second epitaxial layer 14 is formed on the substrate 10where the photodiode 13 is formed (e.g., on the photodiode 13). Ashallow trench isolation (STI) region 15 is formed at a certain area ofthe substrate 10 (e.g., in the second epitaxial layer 14). The substrate10, except for the shallow trench isolation region 15, comprises a wellregion injected with P-type ions and serves as an active region 16.

In addition, a plug 18 injected with n⁺ ions is formed within thesubstrate 10 so as to allow the plug 18 to be connected with thephotodiode 13. Here, the plug 18 is made in a region overlapping with(e.g., coupled to) the shallow trench isolation region 15.

Further, a transfer transistor is formed at the transfer transistorregion of pixel so as to be connected with the plug 18.

Specifically, a gate insulation film 19 and a gate electrode 20 arestacked on the substrate 10. A sidewall spacer 21 is formed at sidewalls of the gate electrode 20. Source/drain regions 22 a and 22 b areformed in the substrate 10 at sides of the gate electrode 20 and thesidewall spacer 21. A lightly doped drain (LDD) region 23 is also formedin the substrate 10 underneath the sidewall spacer 21 and the edge ofthe gate electrode 20.

Furthermore, the source region 22 a of the transfer transistor isconnected with the plug 18, and thus, the transfer transistor and thephotodiode 13 are connected to each other.

Conventional CMOS image sensors having the above construction havedrawbacks as follows.

The plug region exists in the interface of the shallow trench isolation(STI) region, thereby causing vulnerability to leakage current, whichoccurs by n⁺ ions injected with a high energy at the STI interface.Therefore, maximum performance may not be expected in the CMOS imagesensor (CIS) process where low dark current is of importance.

SUMMARY OF THE INVENTION

The present invention has been made in order to solve the above problemsin the art. It is an object of the invention to provide a CMOS imagesensor and a method of manufacturing the same, which can reduce currentleakage through a plug connecting a photodiode and a transfer transistorto each other, to thereby enable or provide a low dark current.

In order to accomplish the above object, according to one aspect of theinvention, there is provided a CMOS image sensor having a photodiode anda transfer transistor. The image sensor includes: a first epitaxiallayer in or on a substrate; a photodiode PD in the first epitaxial layerof the substrate; a second epitaxial layer on the first epitaxial layer;a shallow trench isolation region in an area of the substrate; a plug inthe substrate connected with the photodiode and spaced apart from theshallow trench isolation region; and a transfer transistor having a gateelectrode and source/drain regions, connected with the plug.

The transfer transistor generally includes: a gate insulation film and agate electrode stacked on the substrate; a sidewall spacer on side wallsof the gate electrode; source/drain regions in the substrate at oppositesides of the gate electrode and the sidewall spacer(s); and a lightlydoped drain (LDD) region in the substrate under the sidewall spacer andan edge of the gate electrode. Alternatively, the photodiode may be inthe substrate (e.g., a single-crystal silicon wafer or an epitaxiallayer thereon). Consequently, the plug, the STI region, the source/drainregions, and the LDD region(s) may be in the epitaxial layer on thesubstrate (which may be the second epitaxial layer).

Generally, the source region of the transfer transistor is connectedwith the plug.

According to another aspect of the invention, there is provided a methodof manufacturing a CMOS image sensor having a photodiode and a transfertransistor. The method includes the steps of: forming a first epitaxiallayer on a substrate; forming a photodiode PD in the first epitaxiallayer; forming a second epitaxial layer on the first epitaxial layer;forming a shallow trench isolation region in an area of the substrate;forming a plug within the substrate connected with the photodiode andspaced apart from the shallow trench isolation region; and forming atransfer transistor having a gate electrode and source/drain regions,connected with the plug.

The plug forming step may include the steps of: coating a photosensitivefilm on the substrate and then patterning the photosensitive film so asnot to expose (i.e., to cover completely) the shallow trench isolationregion; and injecting ions into the substrate at a depth sufficient toform the plug connected with photodiode, using the patternedphotosensitive film as a mask.

The transfer transistor forming step includes one or more of the stepsof: laminating a gate insulation film and a gate electrode on thesubstrate; injecting impurity ions of low concentration into thesubstrate at opposite sides of the gate electrode; forming a sidewallspacer at a side wall of the gate electrode; forming source/drainregions in the substrate at opposite sides of the gate electrode and thesidewall spacer; and forming a lightly doped drain region in thesubstrate under the spacer and/or an edge of the gate electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a unit pixel in a conventional CMOSimage sensor having four transistors and two capacitance structures.

FIGS. 2 a and 2 b are plan view and sectional view showing theconnection between a photodiode and a transfer transistor according tothe related art.

FIGS. 3 a and 3 b are plan view and cross-sectional view showing theconnection between a photodiode and a transfer transistor according toan embodiment of the invention.

FIGS. 4 a to 4 d are cross-sectional views showing procedures forforming a photodiode and a transfer transistor according to anembodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereafter, a CMOS image sensor and a method of manufacturing the sameaccording to preferred embodiments of the invention will be describedhereinafter with reference to the accompanying drawings.

First, the construction of a CMOS image sensor according to anembodiment of the invention will be described hereinafter.

FIGS. 3 a and 3 b are plan view and sectional view showing theconnection between a photodiode and a transfer transistor according toan embodiment of the invention.

The connection between the photodiode and the transfer transistor in theCMOS image sensor of the invention will be described hereinafter. Asshown in FIGS. 3 a and 3 b, a first epitaxial layer 41 is formed on orin a substrate 40. Alternatively, the substrate 40 may comprise a firstepitaxial layer 41. A photodiode PD 43 is formed within the firstepitaxial layer 41 of the substrate 40.

In addition, a second epitaxial layer 44 is formed on the substrate 40where the photodiode 43 is formed. Thus, the substrate 40 may comprise asecond epitaxial layer 44, or a second epitaxial layer 44 formed on thefirst epitaxial layer 41 of the substrate 40. A shallow trench isolation(STI) region 45 is formed at a certain area of the substrate 40,generally in the second epitaxial layer 44. The substrate 40, except forthe shallow trench isolation region 45, may comprise a well regioninjected with P-type ions that serves as or provides an active region46.

In addition, a plug 48 which may be injected with n⁺ ions is formed inthe substrate 40 (and in particular, second epitaxial layer 44) so as toallow the plug 48 to be connected with the photodiode 43. Thus, the ionsthat form plug 48 are implanted at a concentration and with an energysufficient to form a plug passing completely through second epitaxiallayer 44, enabling contact with photodiode 43. Here, the plug 48 isspaced apart from the shallow trench isolation region 45 by a certaindistance. In one embodiment, the distance between plug 48 and shallowtrench isolation region 45 provides a sufficient margin of error for thephotolithographic exposure and development processes used to form STIregion 45 and plug 48 to ensure some minimal spacing between STI region45 and plug 48. For example, in a 0.25 micron photolithography process,the target spacing (or the minimum spacing) may be at least 50, 60, 75,90 or 100 nm.

Further, a transfer transistor is formed at the transfer transistorregion of pixel so as to be connected with the plug 48.

Specifically, a gate insulation film 49 and a gate electrode 50 arestacked on the substrate 40. A sidewall spacer 51 is formed at the sidewall of the gate electrode 50. Source/drain regions 52 a and 52 binjected with impurity ions (e.g., n⁺) of high concentration are formedin the substrate 40 at both sides of the gate electrode 50 and thesidewall spacer 51. At this time, a lightly doped drain (LDD) region 53may be formed in the substrate 40 underneath the edge of the gateelectrode 50. Alternatively, LDD regions 53 are formed prior toformation of spacer(s) 51 by conventional ion implantation, and thespacer(s) 51 are subsequently formed over LDD regions 53.

Furthermore, the source region 52 a of the transfer transistor isconnected with the plug 48, and thus, the transfer transistor and thephotodiode 43 are connected to each other.

Hereafter, a method of manufacturing a CMOS image sensor having theabove-construction according to an embodiment of the invention will bedescribed hereinafter.

FIGS. 4 a to 4 d are sectional views showing procedures for forming aphotodiode and a transfer transistor according to an embodiment of theinvention.

The present invention is directed to a method of forming a vertical CMOSimage sensor, in which a plug region connecting a photodiode to the gateof a transfer transistor is separated from the interface of a shallowtrench isolation region (i.e., ion injection for the plug is made intothe active region only), thereby eliminating current leakage occurringfrom implanting a relatively high concentration of relativelyhigh-energy dopant ions at the interface of the shallow trench isolation(STI) 45 with the active region 46 (see, e.g., FIGS. 3A-3B). Therefore,a method of manufacturing the photodiode PD and the transfer transistorwill be described hereinafter below.

First, as shown in FIG. 4 a, a first epitaxial layer 41 is formed in oron a substrate 40. Then, after coating a first photosensitive film 42 onthe substrate 40, the first photosensitive film 42 is selectivelypatterned through a light-exposure and developing process in such a wayas to expose only an area for forming a photodiode.

Thereafter, using the patterned first photosensitive film 42 as a mask,ions are injected into the first epitaxial layer 41 to form a photodiodePD 43.

Then, as shown in FIG. 4 b, a second epitaxial layer 44 is formed on thesubstrate 40 (and particularly on the first epitaxial layer 41) havingthe photodiode 43 formed therein. After that, a shallow trench is formedat a certain area of the substrate 40 through a photolithographicprocess. An insulation film is deposited in the trench and on topsurface of the substrate 40. The insulation film is then planarized(e.g., by chemical mechanical polishing) such that it is left in theshallow trench region only, to thereby form a shallow trench isolation(STI) region 45. In addition, P-type ions are injected into thesubstrate 40, except for the shallow trench isolation region 45,resulting in formation of an active region 46 in the surface of thesubstrate 40.

Thereafter, as shown in FIG. 4 c, a second photosensitive film 47 iscoated on the substrate 40. Then, the second photosensitive film 47 isselectively patterned through a light-exposure and developing process soas to expose only an area for forming a plug. In other words, the secondphotosensitive film 47 completely covers STI region 45, as well as a(minimum) space between STI region 45 and plug region 48 as describedelsewhere herein.

Then, using the patterned second photosensitive film 47 as a mask, n⁺ions are injected into the substrate 40 to form a plug. At this time,the n⁺ ion injection for formation of the plug is carried out such thatn⁺ ions are injected to a depth of the photodiode PD 43 in order for theplug 48 to be connected with the photodiode 43.

Further, the second photosensitive film 47 is patterned so as not toexpose the shallow trench isolation region 45, so that the plug isspaced apart from the shallow trench isolation region 45 by a certaindistance, as described herein.

Next, as shown in FIG. 4 d, in order to form a transfer transistor ofpixel, after depositing a gate isolation film 49 and a polysiliconlayer, a photolithographic and etching process is carried out to form agate insulation film 49 and a gate electrode 50 at desired regions.

Thereafter, although not illustrated in the figures, using a mask notexposing (i.e., covering) the gap between the shallow trench isolationregion 45 and the plug 48, impurity ions are injected at a lowconcentration into the surface of the substrate 40 at both sides of thegate electrode 50. An insulation film is deposited on the top surface ofthe substrate 40 and then etched back (e.g., by anisotropic and/or dryetching) to form a sidewall spacer 51 on the side wall of the gateelectrode 50. Next, although not illustrated in the figures, using amask not exposing (i.e., covering) an area between the shallow trenchregion and the plug 48, impurity ions are injected at a highconcentration (e.g. n⁺) into the substrate 40 at opposite sides of thegate electrode 50 and the sidewall spacer 51 to form source/drainregions 52 a and 52 b. A lightly doped drain (LDD) 53 is also formedunder an edge of the gate electrode 50 where the impurity ions areinjected at a low concentration. In one embodiment, the ions for formingthe LDD 53 are implanted before the spacers 51 are formed.

At this time, the plug 48 is connected with the source region 52 a, andthus the transfer transistor and the photodiode 43 are connected witheach other.

The above explanation and drawings have been illustrated asmanufacturing a single transistor, but other transistors constituting aCMOS image sensor can be formed according to a typical CMOSmanufacturing process.

As described above, the CMOS image sensor and the method ofmanufacturing the same according to the invention has advantageouseffects as follows.

In the vertical CMOS image sensor process, a plug connecting thephotodiode to the transfer transistor is relocated towards the activeregion of the transfer transistor and then isolated from the shallowtrench region. Thus, leakage current caused by n⁺ ions injected with ahigh energy at the interface between the STI region and the activeregion can be eliminated. Accordingly, improved or optimal performancecan be obtained or provided in the CIS process, where low dark currentis of importance.

Although the present invention has been described with reference toseveral exemplary embodiments, the description is illustrative of theinvention and is not to be construed as limiting the invention. Variousmodifications, variations and replacements may occur to those skilled inthe art, without departing from the spirit and scope of the invention asdefined by the appended claims.

1. A CMOS image sensor having a photodiode and a transfer transistor,the image sensor comprising: a substrate comprising a first epitaxiallayer and a second epitaxial layer on the first epitaxial layer; aphotodiode PD in the first epitaxial layer; a shallow trench isolationregion in the substrate; a plug in the substrate connected with thephotodiode and spaced apart from the shallow trench isolation region;and a transfer transistor having a gate electrode and source/drainregions, connected with the plug.
 2. The image sensor as claimed inclaim 1, wherein the transfer transistor further comprises: a gateinsulation film under the gate electrode; wherein the source/drainregions are in the substrate at opposite sides of the gate electrode. 3.The image sensor as claimed in claim 2, wherein the source region of thetransfer transistor is connected with the plug.
 4. The image sensor asclaimed in claim 1, wherein the CMOS image sensor is a vertical CMOSimage sensor.
 5. The image sensor as claimed in claim 2, wherein thetransfer transistor further comprises a sidewall spacer on a side wallof the gate electrode.
 6. The image sensor as claimed in claim 5,wherein the transfer transistor further comprises a lightly doped drain(LDD) region in the substrate under the sidewall spacer.
 7. The imagesensor as claimed in claim 1, wherein the plug is in the secondepitaxial layer
 8. A CMOS image sensor, comprising: a substrate; aphotodiode PD in the substrate; an epitaxial layer on the substrate; ashallow trench isolation region in the epitaxial layer; a plug in theepitaxial layer connected with the photodiode and spaced apart from theshallow trench isolation region; and a transfer transistor having a gateelectrode and source/drain regions, where the source region is connectedwith the plug.